APT20M25JNR datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

• Маркировка
  APT20M25JNR
• Производитель
  Microsemi Corporation
• Описание
  Microsemi Corporation APT20M25JNR Mfr Package Description: ISOTOP-4 Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Terminal Form: SOLDER LUG Terminal Position: UPPER Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: ISOLATED Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 100 A DS Breakdown Voltage-Min: 200 V Avalanche Energy Rating (Eas): 1300 mJ Drain-source On Resistance-Max: 0.0250 ohm Pulsed Drain Current-Max (IDM): 400 A
• Количество страниц
  4 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  203,62 KB

APT20M25JNR datasheet скачать

APT20M25JNR datasheet